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BCW67ATA

Part No BCW67ATA
Manufacturer Diodes Incorporated
Catalog OEM Parts (A - B)
Description Trans Gp Bjt PNP 32V 0.8A 3-PIN SOT-23 T/r
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-23
Collector Emitter Voltage (VCEO) 32 V
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
Gain Bandwidth Product 100 MHz
Max Collector Current 800 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 330 mW
Min Operating Temperature -55 °C
Polarity PNP
RoHS Non-Compliant
Win Source Part Number 1048933-BCW67ATA
Categories OEM Parts(A-B)
Manufacturer Diodes Incorporated
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BCW67ATA CAD Model

Description

The BCW67ATA is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, renowned for its reliability and efficiency in a wide range of electronic applications. This small-signal transistor is designed for general-purpose amplification and switching purposes, making it a versatile component for various circuits.

Key Features

  • High Current Gain: The BCW67ATA boasts a high current gain (hFE), which is crucial for amplification purposes in electronic circuits. This allows for a significant amplification of the input signal with minimal power loss.
  • Low Saturation Voltage: It has a low collector-emitter saturation voltage, which reduces power consumption and improves efficiency, especially in saturation mode applications.
  • Compact SOT-23 Package: The transistor comes in a small SOT-23 surface-mount package, which is ideal for space-constrained applications. Its compact size also allows for high-density mounting on PCBs.
  • Wide Operating Temperature Range: The BCW67ATA operates effectively over a broad temperature range, ensuring stability and performance under varying environmental conditions.

Applications

The BCW67ATA is suitable for a variety of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Driver stages in hi-fi amplifiers and television circuits
  • Switching operations in consumer electronics
  • Linear amplification in telecommunications equipment

Technical Specifications

Parameter Value
Collector-Emitter Voltage (VCEO) 32V
Collector-Base Voltage (VCBO) 50V
Emitter-Base Voltage (VEBO) 5V
Collector Current (IC) 100mA
Power Dissipation (PD) 300mW

With its robust performance and Diodes Incorporated's reputation for quality, the BCW67ATA is an excellent choice for designers and engineers looking for a reliable NPN transistor for their electronic designs.

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