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CY7C1306BV18-200BZC

Part No CY7C1306BV18-200BZC
Manufacturer Cypress Semiconductor Corp
Catalog OEM Parts (C - E)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1021823-CY7C1306BV18-200BZC
Categories OEM Parts(C-E)
Manufacturer Cypress Semiconductor Corp
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian CY7C1306BV18-200BZC CAD Model

Description

The CY7C1306BV18-200BZC is a high-performance synchronous pipelined burst SRAM (Static Random-Access Memory) from Cypress Semiconductor. It is organized as 128K x 36 bits or 256K x 18 bits, configurable via pin selection, offering a total memory capacity of 4.5 Mbit. The '-200' indicates a maximum clock frequency of 200 MHz, suitable for high-speed applications. 'BV18' signifies an operating voltage of 1.8V, and 'BZC' likely refers to the package type and temperature range.

Applications

  • Networking equipment (routers, switches, line cards)
  • High-speed data acquisition systems
  • Digital signal processing (DSP)
  • Image processing applications
  • High-performance embedded systems

Features

  • High-speed synchronous operation: Up to 200 MHz clock frequency.
  • Configurable organization: Can be configured as 128K x 36 bits or 256K x 18 bits.
  • 1.8V power supply: Low voltage operation for reduced power consumption.
  • Pipelined burst architecture: Optimizes data throughput.
  • On-chip address counter: Simplifies memory access.
  • Byte write capability: Allows writing individual bytes within a word.
  • TTL-compatible inputs and outputs: Easy integration with other logic devices.

Benefits

  • High bandwidth: Enables rapid data transfer in demanding applications.
  • Low power consumption: Suitable for energy-sensitive applications.
  • Flexible memory organization: Adapts to various data widths and system requirements.
  • Simplified interface: Synchronous operation and on-chip address counter simplify system design.
  • High reliability: Cypress Semiconductor is known for producing reliable memory devices.

Additional Details

The CY7C1306BV18-200BZC operates from a 1.8V power supply, making it suitable for low-power applications. Its synchronous pipelined burst architecture enables high data throughput, while the on-chip address counter simplifies memory access. The byte write capability allows for writing individual bytes within a word, providing added flexibility. The specific details of the package type (BZC) and operating temperature range are detailed in the Cypress Semiconductor datasheet. This SRAM is designed for high-performance applications, particularly in networking and data processing environments where high speed and low power are critical.

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