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CY7C1061G30-10ZXE

Part No CY7C1061G30-10ZXE
Manufacturer Cypress Semiconductor Corp
Catalog RAM
Description IC SRAM 16MBIT PARALLEL 48TSOP I / SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10 ns 48-TSOP I
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Package Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 16Mb (1M x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.2V ~ 3.6V
Temperature Range - Operating -40°C ~ 125°C (TA)
Mounting SMD (SMT)
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Base Product Number CY7C1061
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Other Names 2015-CY7C1061G30-10ZXE
Standard Package 192
Win Source Part Number 1054210-CY7C1061G30-10ZXE
Ultra Librarian 3D Model Ultra Librarian CY7C1061G30-10ZXE CAD Model

Description

The CY7C1061G30-10ZXE is a high-performance CMOS static RAM (SRAM) device from Cypress Semiconductor. SRAMs are characterized by their fast access times, making them suitable for applications requiring rapid data storage and retrieval. This particular SRAM is designed for use in high-speed memory applications.

Applications

  • Networking Equipment: Used in routers, switches, and network interface cards (NICs) as cache memory for fast data access.
  • Industrial Control Systems: Employed in programmable logic controllers (PLCs) and industrial computers for real-time data storage.
  • Medical Equipment: Utilized in medical imaging systems and patient monitoring devices for temporary data storage.
  • Test and Measurement Equipment: Found in oscilloscopes, logic analyzers, and signal generators as buffer memory.
  • Aerospace and Defense: Used in avionics systems, radar systems, and communication equipment.

Features

  • High Speed: Features a fast access time of 10 ns.
  • Low Power Consumption: Designed for low power operation, making it suitable for battery-powered devices.
  • 3.3V Supply Voltage: Operates from a 3.3V power supply.
  • Byte Writable: Supports byte-write operations.
  • Available in SOIC Package: Available in a SOIC package for surface mount assembly.
  • RoHS Compliant: Meets Restriction of Hazardous Substances (RoHS) directives.

Benefits

  • Fast Data Access: Provides rapid data storage and retrieval.
  • Low Power Operation: Reduces power consumption and heat generation.
  • Easy Integration: Simple interface for easy integration into digital systems.
  • Reliable Performance: Provides stable and dependable operation.
  • Versatile Application: Suitable for a wide range of applications requiring high-speed memory.

Additional Details

The CY7C1061G30-10ZXE is a 64-kbit (8K x 8) SRAM. It is designed for asynchronous operation. It features separate data input and output pins. The operating temperature range is -40°C to +85°C. The device is used where a fast, low-power SRAM is required. The fast access time ensures quick read and write operations, crucial for real-time data processing. The byte-write capability allows for flexible data manipulation. The low power consumption makes it suitable for portable devices and energy-efficient systems.

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