The CY7C1061G30-10ZSXIES is a high-performance CMOS Static RAM (SRAM) device from Cypress Semiconductor. This SRAM is organized as 65,536 words by 16 bits, providing a total memory capacity of 1 Mbit. It's designed for high-speed memory applications requiring fast access times and low power consumption.

Applications

• Cache memory in embedded systems
• Buffer memory for high-speed data transfer
• Look-up tables
• Image processing
• Networking equipment

Features

• High-speed access time: 10 ns
• Low active power consumption
• Low standby power consumption
• 3.3V power supply operation
• Fully static operation: no clock or refresh required
• TTL-compatible inputs and outputs
• Available in a 44-pin TSOP II package

Benefits

• Fast access times enable high-performance system operation.
• Low power consumption extends battery life in portable applications.
• Static operation simplifies system design and reduces complexity.
• TTL compatibility ensures seamless integration with other logic devices.
• The TSOP II package provides a compact footprint for efficient board space utilization.

Technical Specifications

The CY7C1061G30-10ZSXIES operates with a 3.3V power supply. Its access time is 10 ns. It features fully static operation, eliminating the need for refresh cycles. The device is available in a 44-pin TSOP II package. It is designed for use in various embedded systems and other applications where high-speed memory and low power consumption are critical. Additional details, such as precise power consumption figures and operating temperature ranges, should be verified using the official Cypress Semiconductor datasheet.

Package Type: 44-pin TSOP II

Operating Voltage: 3.3V