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PXAC180602MDV1R500XUMA1

Part No PXAC180602MDV1R500XUMA1
Manufacturer Cree/Wolfspeed
Catalog OEM Parts (O - R)
Description IC Amp Rf Ldmos
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1086469-PXAC180602MDV1R500XUMA1
Categories OEM Parts(O-R)
Manufacturer Cree/Wolfspeed
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian PXAC180602MDV1R500XUMA1 CAD Model

Description

The PXAC180602MDV1R500XUMA1 is a power module manufactured by Cree/Wolfspeed. This module is designed for high-efficiency power conversion in a variety of demanding applications, leveraging Wolfspeed's advanced silicon carbide (SiC) technology.

Applications:

  • Electric Vehicle (EV) chargers: Used in on-board and off-board chargers to achieve high efficiency and power density.
  • Industrial power supplies: Enables efficient and compact power supplies for industrial equipment.
  • Renewable energy systems: Employed in solar inverters and wind turbine converters to maximize energy harvesting.
  • Motor drives: Powers high-performance motor drives with improved efficiency and control.
  • Energy storage systems: Integrated into battery energy storage systems (BESS) for efficient power conversion.

Features:

  • Silicon Carbide (SiC) MOSFETs: Utilizes SiC MOSFETs for superior switching performance and reduced losses.
  • High voltage capability: Designed to operate at high DC bus voltages, enabling higher power levels.
  • Low on-resistance (RDS(on)): Minimizes conduction losses, leading to higher efficiency.
  • Integrated gate driver: Simplifies design and improves performance with an integrated gate driver.
  • Optimized thermal performance: Features an optimized thermal design for efficient heat dissipation.
  • Compact package: Space-saving package design for high power density applications.
  • High switching frequency: Enables the use of smaller passive components.

Benefits:

  • Increased Efficiency: SiC technology significantly reduces switching and conduction losses, improving overall system efficiency.
  • Higher Power Density: Compact design and high-frequency operation enable smaller and lighter power conversion systems.
  • Improved Reliability: SiC MOSFETs offer higher temperature capability and improved reliability compared to silicon devices.
  • Reduced System Cost: Higher efficiency and power density can lead to reduced system cost through smaller components and lower cooling requirements.
  • Faster Switching Speeds: Provides faster switching speeds which leads to lower switching losses.

Additional Details:

The PXAC180602MDV1R500XUMA1 power module is typically characterized by its voltage and current ratings, switching frequency, and thermal resistance. Its SiC MOSFETs contribute to reduced switching losses and improved thermal performance, allowing for operation at higher frequencies and temperatures. The integrated gate driver simplifies the design process and ensures optimal performance of the SiC MOSFETs. The compact package facilitates easy integration into various power electronic systems. Precise specifications depend on the exact model number and manufacturer's datasheet.

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