The CEB50N06 is an N-Channel enhancement mode power MOSFET produced by Chino-Excel. It is designed to offer efficient and reliable performance in various power switching applications. This MOSFET is characterized by its low on-resistance and fast switching speed, making it suitable for high-frequency applications.

Applications

• DC-DC converters
• Power inverters
• Motor control circuits
• Power management in computing and telecommunications equipment
• Lighting systems

Features

• N-Channel enhancement mode
• Low on-resistance (RDS(on))
• Fast switching speed
• High avalanche ruggedness
• RoHS compliant

Benefits

• Improved energy efficiency due to low RDS(on)
• Reduced power loss and heat generation
• Enhanced system reliability
• Simplified thermal management
• Suitable for high-frequency applications

Technical Specifications (Typical)

While the exact specifications can vary slightly based on the manufacturer's datasheet, typical specifications for a CEB50N06-type MOSFET include:

• Drain-Source Voltage (VDS): 60V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 50A (depending on package and temperature)
• On-Resistance (RDS(on)): Typically in the range of 8-15 mΩ at VGS = 10V (Check datasheet for specific value)
• Gate Charge (Qg): Dependent on manufacturer
• Operating Temperature: -55°C to +175°C

Consult the manufacturer's datasheet for precise specifications and application guidelines to ensure optimal performance and reliability in your design.