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Same model may have multiple batches, images only for reference.
2N5086 Real Image
Same model may have multiple batches, images only for reference.

2N5086

Part No 2N5086
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Single
Description PNP EPITAXIAL SILICON TRANSISTOR | THROUGH-HOLE TRANSISTOR-SMALL SI
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Central Semiconductor Corp
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 50mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Vce Saturation (Maximum) at Ib, Ic 300mV at 1mA, 10mA
Current - Collector Cutoff (Maximum) 50nA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 150 at 1mA, 5V
Maximum Power 1.5W
Frequency - Transition 40MHz
Temperature Range - Operating -65°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Manufacturer Pack Quantity 2,500
MSL Level Not Applicable
Win Source Part Number 1123921-2N5086
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2N5086 CAD Model

Description

The 2N5086 is a PNP transistor manufactured by Central Semiconductor Corp.

  • Mounting Style: Through-Hole
  • Frequency Transition: 40MHz
  • Supplier Device Package: TO-92
  • Temperature Range: -65°C to 150°C
  • Maximum Collector Current (Ic): 50mA
  • Maximum Voltage for Collector-Emitter Breakdown: 50V
  • Current Collector Cutoff: 50nA (ICBO)
  • DC Current Gain (hFE): 150 @ 1mA, 5V
  • Vce Saturation @ Ib, Ic: 300mV @ 1mA, 10mA
  • Maximum Power: 1.5W

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