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APM9988COC-TRL

Part No APM9988COC-TRL
Manufacturer Anpec
Catalog Hard To Find
Description Dual N-Channel Enhancement Mode MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Anpec
Win Source Part Number 1146556-APM9988COC-TRL
Manufacturer Homepage www.anpec.com.tw
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APM9988COC-TRL CAD Model

Description

The APM9988COC-TRL is a dual N-Channel enhancement mode MOSFET manufactured by Anpec. It is designed for high-efficiency power management applications. This device integrates two N-channel MOSFETs into a single package, offering a compact solution for synchronous rectification, load switching, and other power control functions. A key feature is its low on-resistance, minimizing power loss and improving overall system efficiency. It is commonly utilized in battery-powered devices, DC-DC converters, and power adapters.

Applications

  • Synchronous Rectification
  • Load Switching
  • DC-DC Converters
  • Power Adapters

Features

  • Dual N-Channel MOSFET
  • Low On-Resistance (RDS(on))
  • Low Gate Charge
  • Small Footprint Package
  • Logic Level Gate Drive

Benefits

  • Improved Power Efficiency: The low RDS(on) minimizes power loss and maximizes efficiency.
  • Compact Design: Integrating two MOSFETs in a single package saves board space.
  • Simplified Circuit Design: Logic level gate drive simplifies the design of gate drive circuitry.
  • Reduced Heat Dissipation: Lower power loss translates to less heat generation and improved system reliability.
  • Faster Switching: The low gate charge enables faster switching speeds.

Additional Details

The APM9988COC-TRL comes in a small surface mount package. It is important to consult the datasheet for detailed electrical characteristics, thermal resistance, and absolute maximum ratings before using this component in a design. Proper thermal management may be required to ensure reliable operation, especially at higher power levels. The device's low gate charge contributes to its fast switching speed and reduces gate drive losses. This MOSFET is suitable for use in a wide range of portable and embedded systems. Always follow recommended soldering and handling procedures to avoid potential damage to the component during assembly and manufacturing processes. The specific RDS(on) value will vary based on the gate voltage and temperature, so it's crucial to consult the datasheet for relevant operating conditions. The dual MOSFET configuration allows for flexible design options, such as synchronous rectification in DC-DC converters, or independent control of two separate loads.

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