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HMC435MS8GE

Part No HMC435MS8GE
Manufacturer Analog Devices Inc.
Catalog RF Switches
Description IC SWITCH SPDT 8MSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories RF/IF and RFID
Manufacturer Analog Devices Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Frequency - Lower DC
Frequency - Upper 4GHz
Isolation @ Frequency 35dB @ 4GHz (typ)
Insertion Loss @ Frequency 1.5dB @ 4GHz
IIP3 45dBm (typ)
Topology Absorptive
Circuit SPDT
P1dB 31dBm (typ) IP1dB
Impedance 50 Ohm
Temperature Range - Operating -40°C to 85°C
Supply Voltage - Operating 5V
RF Type General Purpose
Case / Package 8-MSOP-EP
Win Source Part Number 001635-HMC435MS8GE
Family Name HMC435MS8G
Introduction Date March 06, 2003
ECCN EAR99
Country of Origin United States of America
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HMC435MS8GE CAD Model

Description

Analog Devices Inc. HMC435MS8GE

The HMC435MS8GE from Analog Devices Inc. is a high-performance, GaAs MMIC SPDT (Single Pole Double Throw) switch that operates in a frequency range from DC to 3.5 GHz. This versatile component is housed in an MSOP8G (Micro Small Outline Package) that ensures compactness and compatibility with surface-mount technology, making it suitable for a wide range of RF and microwave applications.

With its low insertion loss and high isolation, the HMC435MS8GE provides excellent signal fidelity and minimizes crosstalk, which is crucial for maintaining the integrity of the RF signal path in complex systems. The device features an insertion loss of 0.45 dB and an isolation of 30 dB at 2 GHz, striking a balance between performance and efficiency.

The switch is controlled by two digital control voltage inputs (0/+5V), allowing for easy interfacing with digital logic. The non-reflective design of the switch ensures that the RF signal is terminated in 50 Ohms when switched off, reducing the chance of signal reflections that could degrade performance. Furthermore, the HMC435MS8GE has a P1dB (input power at 1 dB compression point) of 27 dBm, providing robust linearity over a wide dynamic range.

Designed with a focus on reliability and durability, the HMC435MS8GE features ESD protection and a wide operating temperature range from -40°C to +85°C, making it suitable for use in challenging environmental conditions. This switch is ideal for applications in wireless infrastructure, test equipment, and broadband communications systems where high performance and reliability are paramount.

Integration of the HMC435MS8GE into a system is made easier with the availability of comprehensive technical documentation, including datasheets and application notes, provided by Analog Devices Inc. This ensures that designers can fully utilize the switch's capabilities and implement it effectively within their designs.

Overall, the HMC435MS8GE is a testament to Analog Devices Inc.'s commitment to delivering high-quality, high-performance components that meet the stringent requirements of modern RF and microwave systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $64.0299 $64.0299
2+ $52.5374 $105.0748
3+ $50.8956 $152.6868
5+ $49.2538 $246.2690
6+ $47.6120 $285.6720
8+ $42.6866 $341.4928
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,700 pieces
Order Increment : 1 pcs
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