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Same model may have multiple batches, images only for reference.
AOTF7T60P Real Image
Same model may have multiple batches, images only for reference.

AOTF7T60P

Part No AOTF7T60P
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog FETs - Single
Description MOSFET N-CH 600V 7A TO220F / RoHS and Halogen Free Compliant
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.1Ohm at 3.5A, 10V
Vgs(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 965pF at 100V
Power Dissipation (Maximum) 38W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3F
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 808421-AOTF7T60P
Ultra Librarian 3D Model Ultra Librarian AOTF7T60P CAD Model

Description

The AOTF7T60P is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Alpha & Omega Semiconductor Inc.

  • Maximum Power Dissipation: 38W (Tc)
  • Drain-Source Voltage: 600V
  • Continuous Drain Current @ 25°C: 7A (Tc)
  • Maximum Rds On @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 965pF @ 100V
  • Package: TO-220-3F

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81+ $4.2966 $348.0246
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