The Alpha & Omega Semiconductor Inc. MOSFET (Metal Oxide) N-Channel transistor is an electronic component that can be used in a wide range of applications from Alpha & Omega Semiconductor Inc..

• Drain to Source Voltage (Vdss): 60V
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Temperature Range: -55°C to 150°C
• Power Dissipation (Maximum): 24W (Tc)
• Supplier Device Package: 8-DFN-EP (3x3)
• Manufacturer Package: 8-PowerVDFN
• Rds On (Maximum) @ Id, Vgs: 13.2mOhm @ 13A, 10V
• Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Maximum) @ Vds: 755pF @ 30V
• Current - Continuous Drain (Id) @ 25°C: 13A
• Vgs(th) (Maximum) @ Id: 2.2V @ 250μA
• Maximum Vgs: ±20V