The AO3485C is a P-Channel enhancement mode MOSFET from Alpha & Omega Semiconductor. This device utilizes advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. It is designed for use in load switching applications, power management, and battery protection circuits.

Applications

• Load Switching
• Power Management in Portable Devices
• Battery Protection Circuits
• DC-DC Conversion

Features

• Low RDS(ON): RDS(ON) = 0.045Ω (typ.) @ VGS = -4.5V
• Low Gate Charge: Qg = 7.5nC (typ.) @ VGS = -4.5V
• Low Input Capacitance: Ciss = 680pF (typ.)
• Gate Voltage as low as 1.8V
• ESD Protection
• RoHS Compliant

Benefits

• Increased Efficiency: Low RDS(ON) minimizes power loss during switching, increasing overall efficiency.
• Longer Battery Life: Reduced power loss leads to longer battery life in portable applications.
• Compact Design: Small footprint allows for integration into space-constrained applications.
• Enhanced Reliability: Robust design and ESD protection ensure reliable operation.

Additional Details

The AO3485C is available in a SOT-23 package. It features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -4.2A. The operating and storage junction temperature range is -55°C to +150°C.