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Same model may have multiple batches, images only for reference.
AS4C4M16S-6BIN Real Image
Same model may have multiple batches, images only for reference.

AS4C4M16S-6BIN

Part No AS4C4M16S-6BIN
Manufacturer Alliance Memory, Inc.
Catalog RAM
Description IC DRAM 64MBIT PARALLEL 54TFBGA / SDRAM Memory IC 64Mb (4M x 16) Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)
Datasheet
AS4C4M16S-6BIN Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Alliance Memory, Inc.
Package Tray
Product Status Obsolete
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 64Mb (4M x 16)
Memory Interface Parallel
Clock Frequency 166 MHz
Write Cycle Time - Word, Page 2ns
Access Time 5.4 ns
Voltage - Supply 3V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 54-TFBGA
Supplier Device Package 54-TFBGA (8x8)
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0002
Other Names 1450-1077
Standard Package 348
Win Source Part Number 1027840-AS4C4M16S-6BIN
Ultra Librarian 3D Model Ultra Librarian AS4C4M16S-6BIN CAD Model

Description

The AS4C4M16S-6BIN is a 64Mb (4M x 16) DRAM memory chip with an access time of 5.4ns.

  • Temperature Range: -40°C ~ 85°C (TA)
  • Voltage Supply: 3V ~ 3.6V
  • Package: 54-TFBGA
  • Clock Frequency: 166 MHz
  • MSL Level: 3 (168 hours)
  • REACH: Unaffected
  • HTSUS Code: 8542.32.0002

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