The AP9980H is a 30V N-channel enhancement mode power MOSFET from Advanced Power Electronics Corp. designed for high-efficiency switching applications. It utilizes advanced trench technology to provide excellent RDS(ON), low gate charge, and fast switching speeds, minimizing conduction and switching losses. This contributes to higher overall system efficiency.

Applications

• DC-DC converters
• Load Switching
• Power management in portable devices
• Synchronous Rectification

Features

• Advanced Trench Technology
• Low RDS(ON)
• Low Gate Charge
• Fast Switching Speed
• Lead Free and Green Device Available (RoHS Compliant)

Benefits

• Improved System Efficiency: Lower RDS(ON) reduces conduction losses, leading to better energy efficiency in power conversion applications.
• Reduced Power Dissipation: Lower gate charge and faster switching speed minimize switching losses, resulting in less heat generation and improved thermal performance.
• Compact Design: The device is available in a standard package, enabling compact and space-saving designs.
• Enhanced Reliability: Robust design and manufacturing processes ensure high reliability and long-term performance.
• Environmentally Friendly: Lead-free and RoHS compliant, contributing to a greener environment.

Technical Specifications (Typical Values)

• VDS (Drain-Source Voltage): 30V
• ID (Continuous Drain Current): Determined by package and thermal limitations, please refer to the datasheet.
• RDS(ON) (Drain-Source On-Resistance): Please refer to the datasheet for specific RDS(ON) values at different VGS.
• VGS(th) (Gate Threshold Voltage): Please refer to the datasheet for specific VGS(th) range.
• Qg (Total Gate Charge): Please refer to the datasheet for specific Qg value.
• Package: SOP-8