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AP95N25W

Part No AP95N25W
Manufacturer Advanced Power Electronics Corp.
Catalog Hard To Find
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Sample
Rohs State rohs
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Manufacturer Advanced Power Electronics Corp.
Win Source Part Number 1146136-AP95N25W
Manufacturer Homepage www.a-power.com.tw
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AP95N25W CAD Model

Description

The AP95N25W is an N-channel enhancement mode power MOSFET produced by Advanced Power Electronics Corp. This MOSFET is designed for power switching applications, offering a combination of low on-resistance and fast switching speed. It is commonly used in applications such as DC-DC converters, synchronous rectification, and power management circuits, where high efficiency and reliable performance are essential.

Applications:

      
  • DC-DC Converters: Used for efficient voltage conversion in electronic circuits.
  •   
  • Synchronous Rectification: Improves the efficiency of power supplies.
  •   
  • Power Management Circuits: Used in various electronic devices to optimize power consumption.
  •   
  • Motor Control: Control the speed and torque of DC motors.

Features:

      
  • N-Channel Enhancement Mode: Simplifies gate drive requirements.
  •   
  • Low On-Resistance (RDS(on)): Minimizes power loss and increases efficiency.
  •   
  • Fast Switching Speed: Enables efficient high-frequency operation.
  •   
  • High Avalanche Ruggedness: Provides robustness against voltage spikes.
  •   
  • Lead-Free and RoHS Compliant: Environmentally friendly.

Benefits:

      
  • High Efficiency: Reduces power dissipation and heat generation.
  •   
  • Improved System Performance: Fast switching enhances system responsiveness.
  •   
  • Enhanced Reliability: Robust design ensures stable performance under varying conditions.
  •   
  • Environmentally Friendly: Complies with environmental regulations.

Additional Details:

The AP95N25W is typically available in a TO-252 (DPAK) package. Key parameters include the drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID). The low RDS(on) characteristic is critical for minimizing conduction losses and improving overall system efficiency. This MOSFET is engineered to provide a balance of performance, reliability, and environmental compliance, making it a versatile choice for a range of power electronics applications.

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