The AP0403GH-HF is a P-Channel enhancement mode power MOSFET from Advanced Power Electronics Corp. (APEC). This MOSFET is designed for high-efficiency power management applications, providing a combination of low on-resistance and fast switching capabilities. The “HF” designation suggests that the device is Halogen-Free.

Applications

• Load Switching: Used for efficiently switching power to various loads in electronic systems.
• Battery Management Systems: Integrated into battery chargers and protection circuits for controlling charge and discharge.
• Power Management in Portable Devices: Employed in smartphones, tablets, and laptops for efficient power distribution.
• DC-DC Converters: Utilized in buck and boost converters for voltage regulation.
• LED Lighting: Used in LED drivers to control the current and brightness of LEDs.

Features

• P-Channel MOSFET: Offers efficient current conduction in P-channel configuration.
• -30V Drain-Source Voltage: Withstands drain-source voltages up to -30V.
• -5.5A Continuous Drain Current: Supports a continuous drain current of up to -5.5A.
• Low On-Resistance (RDS(on)): Features low on-resistance to minimize power loss during conduction.
• Fast Switching Speed: Enables rapid switching transitions for high-frequency applications.
• Logic Level Gate Drive: Can be driven directly by logic level signals, simplifying circuit design.
• Halogen-Free: Compliant with Halogen-Free standards for environmental protection.

Benefits

• High Efficiency: Low on-resistance reduces power dissipation and improves overall efficiency.
• Simplified Drive: Logic level gate drive simplifies the driving circuitry.
• Reliable Operation: Designed for stable and reliable performance in various operating conditions.
• Compact Design: Available in compact surface mount packages for space-constrained applications.
• Environmentally Friendly: Halogen-Free construction makes it environmentally compliant.

Technical Specifications

The AP0403GH-HF features a drain-source voltage (VDS) of -30V, a continuous drain current (ID) of -5.5A, and a pulsed drain current (IDM) of -22A. Its on-resistance (RDS(on)) is typically 28 mOhms at VGS = -10V. The gate-source voltage (VGS) is rated at ±20V. The device has a total gate charge (Qg) of 11 nC and a turn-on delay time of 7 ns. It operates over a temperature range of -55°C to +150°C. The package type is SOP-8.