The CJU02N60 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ZP Semiconductor. It is designed for high-voltage, high-speed switching applications.

Applications

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supplies (UPS)
• DC-DC converters
• Motor control

Features

• Low on-resistance (R_DS(on)) minimizing conduction losses
• High switching speed reducing switching losses
• High avalanche ruggedness
• RoHS compliant

Benefits

• Improved energy efficiency.
• Reduced heat generation.
• Increased system reliability.
• Meets environmental standards.

Detailed Specifications

The CJU02N60 has a drain-source voltage (V_DSS) rating of 600V and a continuous drain current (I_D) rating of 2A. The gate-source voltage (V_GS) is rated at ±30V. The on-resistance (R_DS(on)) is typically 4.5 ohms at V_GS = 10V. The total gate charge (Q_g) is around 8 nC. The device is packaged in a TO-251 or TO-252 package. The operating temperature range is -55°C to +150°C. The low on-resistance contributes to reduced power dissipation. The high avalanche ruggedness makes it durable. Due to it being END-OF-LIFE, replacement parts are recommended for new designs.