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ZXMC3A18DN8TC

Part No ZXMC3A18DN8TC
Manufacturer Zetex Semiconductors
Catalog Electronic Wholesale
Description COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Zetex Semiconductors
Win Source Part Number 1283413-ZXMC3A18DN8TC
Manufacturer Homepage www.diodes.com/
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMC3A18DN8TC CAD Model

Description

The ZXMC3A18DN8TC is a dual N-channel enhancement mode MOSFET from Zetex Semiconductors (now Diodes Incorporated), designed for applications requiring efficient power switching, such as DC-DC converters, load switches, and power management in portable devices. It offers low on-state resistance (RDS(on)) and is available in a compact package, making it suitable for space-constrained applications. The dual configuration allows for greater flexibility in circuit design.

Applications:

  • DC-DC Converters
  • Load Switching
  • Power Management in Portable Devices
  • Battery Charging Circuits

Features:

  • Dual N-Channel MOSFET: Provides two independent MOSFETs in a single package.
  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Low Gate Threshold Voltage (VGS(th)): Allows for easy drive with low voltage logic.
  • Small Footprint: Enables compact design and high-density board layouts.
  • Enhancement Mode: Simplifies drive circuitry.

Benefits:

  • Increased Efficiency: Low RDS(on) reduces power dissipation.
  • Compact Design: Small package size allows for integration in space-sensitive applications.
  • Simplified Circuit Design: Easy to drive with low voltage logic.
  • Flexibility: Dual MOSFET configuration allows for various circuit topologies.

Specifications:

  • Polarity: N-Channel
  • Maximum Drain-Source Voltage (VDS): 30V
  • Maximum Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 4.2A
  • RDS(on) @ VGS = 10V: 45 mΩ
  • RDS(on) @ VGS = 4.5V: 60 mΩ
  • Operating Temperature: -55°C to +150°C
  • Package: DFN2020-8

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