The NCEP028N85D is an N-channel enhancement mode power MOSFET produced by Wuxi. This MOSFET is designed for high-efficiency switching applications. It features a low on-resistance (RDS(on)) to minimize conduction losses and a fast switching speed to reduce switching losses, contributing to overall system efficiency. The device is designed to withstand high voltage stress and provide reliable performance in demanding power applications.

Applications

• DC-DC converters
• Synchronous rectification in power supplies
• Motor control applications
• LED lighting
• Battery management systems

Features

• Low RDS(on) for reduced conduction losses
• Fast switching speed for improved efficiency
• High avalanche energy rating
• Temperature range up to 175°C
• RoHS compliant

Benefits

• Improved system efficiency, resulting in lower power consumption and reduced heat generation
• Increased power density due to the device's compact size and high current capability
• Enhanced system reliability due to the device's robust design and high avalanche energy rating
• Simplified thermal management due to reduced power dissipation

Technical Specifications

The NCEP028N85D has a drain-source voltage (VDS) rating of 850V and a continuous drain current (ID) rating dependent on the specific package and operating conditions. Its on-resistance (RDS(on)) is typically a few ohms at a gate-source voltage (VGS) of 10V. The gate charge (Qg) is a crucial parameter affecting switching speed. The device is typically available in a TO-220 or similar through-hole package for ease of mounting and thermal dissipation.

Careful consideration should be given to the device's thermal performance, including the use of appropriate heat sinking, to ensure that the maximum junction temperature is not exceeded. Proper gate drive circuitry is also important to achieve optimal switching performance and minimize EMI.