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Same model may have multiple batches, images only for reference.
NXPSC20650W-AQ
Same model may have multiple batches, images only for reference.

NXPSC20650W-AQ

Part No NXPSC20650W-AQ
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Arrays
Description SILICON CARBIDE POWER DIODE / Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 650 V 20A Through Hole TO-247-3
Datasheet
NXPSC20650W-AQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr WeEn Semiconductors
Package Tube
Diode Configuration 1 Pair Common Cathode
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 20A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 650 V
Operating Temperature - Junction 175°C (Max)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NXPSC
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names 934072129127,1740-NXPSC20650W-AQ
Standard Package 240
Win Source Part Number 972594-NXPSC20650W-AQ
Ultra Librarian 3D Model Ultra Librarian NXPSC20650W-AQ CAD Model

Description

The NXPSC20650W-AQ is a silicon carbide Schottky diode designed for use in discrete semiconductor products.

  • Maximum DC Reverse Voltage: 650 V
  • Forward Voltage: 1.7 V @ 10 A
  • Reverse Recovery Time: 0 ns
  • Diode Configuration: 1 pair common cathode
  • Average Rectified Current: 20 A per diode
  • Operating Temperature Range: up to 175°C
  • Package Type: TO-247-3
  • Packaging: tube
  • Manufacturer: WeEn Semiconductors

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