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Same model may have multiple batches, images only for reference.
NXPSC126506Q Real Image
Same model may have multiple batches, images only for reference.

NXPSC126506Q

Part No NXPSC126506Q
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description SILICON CARBIDE POWER DIODE  /  Diode Silicon Carbide Schottky 650 V 12A Through Hole TO-220AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr WeEn Semiconductors
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V
Capacitance @ Vr, F 380pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction 175°C (Max)
Base Product Number NXPSC
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names 1740-NXPSC126506Q,934071115127
Standard Package 1,000
Win Source Part Number 1083046-NXPSC126506Q
Ultra Librarian 3D Model Ultra Librarian NXPSC126506Q CAD Model

Description

The NXPSC126506Q is a silicon carbide Schottky diode designed for use in discrete semiconductor products.

  • Maximum Reverse Voltage: 650 V
  • Maximum Average Rectified Current: 12A
  • Forward Voltage: 1.7 V @ 12 A
  • Reverse Recovery Time: 0 ns
  • Mounting Type: Through Hole
  • Package: TO-220-2
  • Operating Temperature Rating: Up to 175°C (TJ)

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