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Same model may have multiple batches, images only for reference.
VS-GT55NA120UXVishay General Semiconductor - Diodes Division
Same model may have multiple batches, images only for reference.

VS-GT55NA120UX

Part No VS-GT55NA120UX
Manufacturer Vishay
Catalog TRANSISTORS
Description SOT-227 - HIGH SIDE CHOPPER IGBT
Datasheet
VS-GT55NA120UX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202383-VS-GT55NA120UX
Win Source Part Number Cross
Manufacturer Vishay General Semiconductor - Diodes Division
Category Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Configuration Single Chopper
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 68 A
Power - Max 291 W
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 50A
Ultra Librarian 3D Model Ultra Librarian VS-GT55NA120UX CAD Model

Description

The Vishay General Semiconductor - Diodes Division IGBT module is a high-power transistor module in the category of discrete semiconductor products.

  • Power Rating: 291W
  • Configuration: Single Chopper
  • IGBT Type: Trench Field Stop
  • Voltage Breakdown: 1200V
  • Current Rating: 68A
  • Vce(on): 2.8V @ 15V gate-emitter voltage and 50A collector current
  • Product Status: Active

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