The SUP90N10-8M8P-E3 is a high-performance N-Channel power MOSFET from Vishay Semiconductors, designed for demanding switching applications requiring high efficiency and reliability. This MOSFET features low on-resistance and gate charge, minimizing power losses and enhancing system performance. It is ideally suited for use in DC-DC converters, power management circuits, and motor control applications where efficiency and robust performance are critical.

Applications:

• DC-DC Converters: Efficient voltage regulation and power conversion circuits.
• Power Management Circuits: Systems requiring precise power distribution and control.
• Motor Control Applications: Control of speed and torque in electric motors.
• Synchronous Rectification: Improving efficiency in secondary-side rectification of switching power supplies.
• Uninterruptible Power Supplies (UPS): Backup power solutions during power outages.

Features:

• N-Channel MOSFET: Efficient switching capabilities.
• Low On-Resistance (RDS(on)): Minimizes conduction losses, enhancing overall efficiency.
• Low Gate Charge (Qg): Reduces switching losses and improves high-frequency performance.
• Avalanche Rated: Robustness against voltage spikes and transient conditions.
• Fast Switching Speed: Enables high-frequency operation, enhancing system responsiveness.
• Halogen-Free and RoHS Compliant: Environmentally friendly design.

Benefits:

• High Efficiency: Low on-resistance and gate charge minimize power losses, improving efficiency in switching applications.
• Improved System Performance: Fast switching speed and avalanche rating enhance system responsiveness and reliability.
• Increased Reliability: Robust design and avalanche rating provide protection against voltage spikes and transient conditions.
• Environmentally Friendly: Halogen-free and RoHS compliant, minimizing environmental impact.
• Simplified Design: Easy implementation in power management circuits and control systems.

Specifications:

The SUP90N10-8M8P-E3 features a drain-source voltage (VDS) of 100V, a continuous drain current (ID) of 80A, and a very low on-resistance (RDS(on)) of typically 8.8 mΩ at VGS = 10V. The gate-source threshold voltage (VGS(th)) is typically between 2V and 4V. This MOSFET is available in a D2PAK (TO-263) package, suitable for surface mounting and efficient heat dissipation.

This MOSFET is designed to meet the stringent requirements of modern power electronics, offering high efficiency, reliability, and environmental compliance. Its low on-resistance and fast switching speed make it an excellent choice for high-frequency switching applications.