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SUP90N08-4M8P-E3

Part No SUP90N08-4M8P-E3
Manufacturer Vishay
Catalog FETs - Single
Description N-Channel 75-V (D-S) MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194984-SUP90N08-4M8P-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SUP90N08-4M8P-E3 CAD Model

Description

The SUP90N08-4M8P-E3 is an N-Channel power MOSFET from Vishay Siliconix, designed for high-efficiency switching applications. This MOSFET is particularly well-suited for synchronous rectification in DC-DC converters, power supplies, and motor control circuits. The part is characterized by a very low on-resistance, fast switching speed, and high current capability. The "-E3" suffix indicates that the device is lead-free and RoHS compliant.

Applications:

  • Synchronous Rectification: Enhancing efficiency in DC-DC converters by replacing diodes with MOSFETs.
  • DC-DC Conversion: Efficient power regulation in various electronic devices and systems.
  • Power Supplies: Use in switching power supplies to increase efficiency and reduce size.
  • Motor Control: Driving motors with enhanced efficiency and precision.
  • Load Switching: Controlling the power supply to various loads.

Features:

  • N-Channel MOSFET: Provides efficient and fast switching characteristics.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall efficiency.
  • Fast Switching Speed: Reduces switching losses and allows for higher frequency operation.
  • High Current Capability: Designed to handle large current loads.
  • Avalanche Rated: Built to withstand voltage transients, enhancing reliability.
  • TrenchFET® Power MOSFET Technology: Offers high power density and efficiency.
  • Lead (Pb)-free and RoHS Compliant (-E3 suffix): Meets environmental regulations for hazardous substances.

Benefits:

  • Increased Efficiency: The low RDS(on) significantly reduces power dissipation, leading to higher efficiency in power conversion applications.
  • Reduced Switching Losses: Fast switching speed minimizes energy loss during switching transitions, further enhancing efficiency.
  • Improved Reliability: The avalanche rating ensures that the MOSFET can withstand voltage transients, increasing its robustness and lifespan.
  • Simplified Design: Can be driven by standard gate drive circuits, simplifying the overall circuit design.
  • Environmentally Friendly: The RoHS compliance ensures that the device meets environmental standards, reducing its impact on the environment.

Additional Details:

The SUP90N08-4M8P-E3 features a drain-source voltage (VDS) rating of 80V and a continuous drain current (ID) rating of up to 90A, depending on the specific package and thermal management. The 4M8P likely refers to a specific on-resistance value or test condition. The device is typically packaged in a TO-220 or similar package for efficient heat dissipation. This MOSFET is well-suited for high-efficiency power conversion applications where low losses, high current capability, and robust performance are required. Its fast switching characteristics and low on-resistance make it a superior choice for demanding power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1769 $58.8450
120+ $0.9656 $115.8720
190+ $0.9356 $177.7640
260+ $0.9055 $235.4300
330+ $0.8755 $288.9150
445+ $0.7854 $349.5030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 197 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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