The SUP80N15-20L-E3 is an N-Channel power MOSFET from Vishay, designed for high-efficiency switching applications. This device features a low on-resistance, high current capability, and is optimized for synchronous rectification in DC-DC converters. The “-E3” suffix indicates compliance with RoHS standards, signifying an environmentally friendly component.
Applications:
- Synchronous Rectification: Improving efficiency in DC-DC converters.
- DC-DC Conversion: Power regulation in various electronic devices.
- Power Supplies: Used in switching power supplies for efficiency.
- Battery Management Systems (BMS): Switching and protection in battery-powered devices.
- Motor Control: Efficient control of small to medium-sized motors.
Features:
- N-Channel MOSFET: Provides efficient and fast switching.
- Low On-Resistance (RDS(on)): Minimizes conduction losses.
- High Current Capability: Supports high current loads.
- Logic Level Gate Drive: Simplified gate drive requirements.
- Fast Switching Speed: Reduces switching losses.
- TrenchFET® Power MOSFET Technology: High power density and efficiency.
- Lead (Pb)-free and RoHS Compliant (-E3 Suffix): Environmentally friendly.
Benefits:
- Increased Efficiency: Low RDS(on) reduces power dissipation.
- Simplified Design: Logic-level gate drive simplifies design.
- Improved Thermal Performance: Allows operation at higher power levels.
- Reliable Operation: Designed for stable performance.
- Environmentally Friendly: Compliant with RoHS standards.
Additional Details:
The SUP80N15-20L-E3 has a drain-source voltage (VDS) rating of 150V and a continuous drain current (ID) rating of 80A, depending on thermal conditions. The on-resistance (RDS(on)) is very low, minimizing power losses. This MOSFET is typically packaged in a TO-220 or similar package for efficient heat dissipation. Its logic-level gate drive makes it easy to interface with digital control circuits. This device is suitable for applications requiring high efficiency and reliable switching performance. The fast switching speed of this MOSFET minimizes switching losses, further contributing to overall efficiency.
