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Same model may have multiple batches, images only for reference.
SUD50N024-09P-T4E3 Vishay
Same model may have multiple batches, images only for reference.

SUD50N024-09P-T4E3

Part No SUD50N024-09P-T4E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 22V 49A TO252
Datasheet
SUD50N024-09P-T4E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Vishay-Siliconix
Series TrenchFET
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 22V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Rds On (Max) @ Id, Vgs 9.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1300pF @ 10V
Power - Max 39.5W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style SMD/SMT
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Device Package TO-252, (D-Pak)
Win Source Part Number 194933-SUD50N024-09P-T4E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SUD50N024-09P-T4E3 CAD Model

Description

The Vishay-Siliconix TrenchFET TO-252-3 MOSFET N-Channel, Metal Oxide transistor is a high-performance device that is designed to deliver reliable and efficient performance in a range of applications.

  • Manufacturer: Vishay-Siliconix
  • Drain to Source Voltage: 22V
  • Continuous Drain Current: 49A (Tc)
  • On-State Resistance: 9.5 mOhm @ 20A, 10V
  • Gate Charge: 16nC @ 4.5V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature: -55°C to 175°C (TJ)

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