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SQJ980EP-T1-GE3

Part No SQJ980EP-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 192754-SQJ980EP-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SQJ980EP-T1-GE3 CAD Model

Description

The SQJ980EP-T1-GE3 is a 100 V, N-Channel Power MOSFET manufactured by Vishay. This MOSFET is specifically designed for high-efficiency power switching applications. It utilizes advanced trench MOSFET technology to achieve exceptionally low on-resistance (RDS(on)) and gate charge (Qg), thus minimizing power losses and maximizing efficiency in power conversion circuits. The device is packaged in a PowerPAK® SO-8 single configuration, which provides excellent thermal performance and compact board space utilization.

Applications

  • Synchronous Rectification in AC-DC and DC-DC converters
  • Primary Side Switching in isolated converters
  • Load Switching
  • Motor Control
  • Battery Management Systems

Features

  • Low On-Resistance (RDS(on)): Reduces conduction losses, leading to higher efficiency in power conversion.
  • Low Gate Charge (Qg): Minimizes switching losses at high frequencies.
  • Trench MOSFET Technology: Enables high cell density and efficient current handling.
  • PowerPAK® SO-8 Single Package: Offers excellent thermal performance in a small footprint.
  • 100% Rg Tested: Ensures gate ruggedness and reliability for stable operation.
  • Lead (Pb)-free and Halogen-free: Complies with environmental regulations and standards.

Benefits

  • High Efficiency Power Conversion: Low RDS(on) and Qg minimize power losses, resulting in high overall efficiency in switching applications.
  • Reduced Heat Dissipation: Lower power losses translate to less heat generation, simplifying thermal management and reducing the need for bulky heat sinks.
  • Compact System Design: The PowerPAK® SO-8 package allows for smaller, more space-efficient designs, making it ideal for portable and space-constrained applications.
  • Enhanced Reliability: Rugged design and 100% Rg testing ensure stable and reliable performance even under demanding conditions.
  • Environmentally Compliant: Lead-free and halogen-free materials reduce environmental impact, aligning with RoHS directives.

Additional Details

The SQJ980EP-T1-GE3 has a continuous drain current (ID) rating that varies based on the operating conditions and thermal management implemented. The gate-source voltage (VGS) rating is typically ±20V. Designed for surface mount assembly, it is supplied in tape and reel packaging for automated manufacturing processes. It is commonly utilized in applications requiring a balance of high efficiency, power density, and reliability, such as power adapters, battery chargers, and DC-DC converters in various electronic devices.

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