The 1383528-SQ4917EY-T1_BE3 is a MOSFET array designed for discrete semiconductor applications. It belongs to the Automotive, AEC-Q101, TrenchFET series.
- FET Type: P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Power - Max: 5W
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- Gate Charge (Qg) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) @ Vds: 1910pF @ 30V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Series: Automotive, AEC-Q101, TrenchFET®
- Manufacturer: Vishay
- ECCN: EAR99
- Moisture Sensitivity Level (MSL): 1 (Unlimited)