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Same model may have multiple batches, images only for reference.
SIS862DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIS862DN-T1-GE3

Part No SIS862DN-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 60V 40A 1212
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 8.5mOhm at 20A, 10V
Vgs(th) (Maximum) at Id 2.6V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 32nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1320pF at 30V
Power Dissipation (Maximum) 3.7W , 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK 1212-8
Manufacturer Package PowerPAK 1212-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 810856-SIS862DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIS862DN-T1-GE3 CAD Model

Description

Vishay Siliconix's SIS862DN-T1-GE3 MOSFET is a high-performance, N-channel component designed for use in a wide range of applications.

  • Transistor Type: N-Channel MOSFET
  • Continuous Drain Current: 40A
  • Drain-Source Voltage: 60V
  • Package: PowerPAK 1212-8
  • Operating Temperature: -55°C to 150°C
  • Gate Charge @ 10V: 32nC
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1140 $50.1300
110+ $0.9141 $100.5510
170+ $0.8855 $150.5350
235+ $0.8570 $201.3950
305+ $0.8284 $252.6620
405+ $0.7427 $300.7935
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Availability: 38,660 pieces
MOQ: 45 pcs
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