The SIRA20DP-T1-GE3 is a P-Channel TrenchFET® power MOSFET from Vishay. This MOSFET is designed to provide efficient power switching in a variety of applications. Its low on-resistance (R_DS(on)) and fast switching speed contribute to high efficiency and reduced power loss.

Applications:

• Load switches in portable devices
• Battery management systems
• Power management in notebooks and tablets
• DC-DC converters
• Solid-state relays

Features:

• P-Channel configuration
• TrenchFET® technology for low on-resistance
• Low gate charge (Qg) for fast switching
• 100% Rg tested
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2011/65/EU

Benefits:

• Reduced power loss and improved efficiency due to low R_DS(on)
• Faster switching speeds lead to improved performance in high-frequency applications
• Simplified gate drive requirements due to low gate charge
• Enhanced reliability through 100% Rg testing
• Environmentally friendly due to halogen-free construction and RoHS compliance
• Suitable for space-constrained applications due to compact packaging

Additional Details:

The SIRA20DP-T1-GE3 has a drain-source voltage (V_DS) rating of -20V and a continuous drain current (I_D) rating of -7.8A. The typical R_DS(on) at V_GS = -4.5V is 23 mΩ, ensuring minimal power dissipation during operation. The device is available in a PowerPAK® SC-70 package, which offers excellent thermal performance and a small footprint. The operating junction temperature range is -55°C to +150°C. This MOSFET is suitable for applications demanding high efficiency and compact size.

This MOSFET's P-channel configuration makes it ideal for high-side switching applications, where it can be easily controlled with a low-side driver. The TrenchFET® technology further enhances its performance by minimizing conduction losses and improving switching characteristics.