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Same model may have multiple batches, images only for reference.
SIHG105N60EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG105N60EF-GE3

Part No SIHG105N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 29A TO247AC / N-Channel 600 V 29A (Tc) 208W (Tc) Through Hole TO-247AC
Datasheet
SIHG105N60EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EF
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 102mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1804 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG105
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHG105N60EF-GE3,742-SIHG105N60EF-GE3CTINACTIVE,742-SIHG105N60EF-GE3DKRINACTIVE,742-SIHG105N60EF-GE3TR-ND
Standard Package 500
Win Source Part Number 992993-SIHG105N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG105N60EF-GE3 CAD Model

Description

The Vishay Siliconix SIHG105N60EF-GE3 is a high-quality MOSFET transistor that is designed to offer reliable performance.

  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Popularity: Low
  • Supply and Demand Status: Shortage
  • RoHS Compliant: Yes

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40+ $2.9278 $117.1120
62+ $2.8364 $175.8568
85+ $2.7449 $233.3165
109+ $2.6534 $289.2206
146+ $2.3788 $347.3048
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Availability: 1,500 pieces
MOQ: 17 pcs
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