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SI9958DY-T1-E3

Part No SI9958DY-T1-E3
Manufacturer Vishay
Catalog OEM Parts ( S )
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 999735-SI9958DY-T1-E3
Categories OEM Parts( S )
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI9958DY-T1-E3 CAD Model

Description

The SI9958DY-T1-E3 is a P-Channel 20-V (D-S) MOSFET from Vishay. This power MOSFET is designed for load switching and power management applications. Its primary function is to provide efficient and reliable switching performance in various electronic circuits.

Applications:

  • Load Switching: Used for turning power on and off to various loads in electronic systems.
  • Power Management: Employed in DC-DC converters and other power regulation circuits.
  • Battery Management Systems: Found in battery charging and discharging circuits.
  • Solid State Relays: Can be used to construct solid state relays for switching applications.
  • Motor Control: Suitable for low-power motor control applications.

Features:

  • P-Channel MOSFET: Allows for efficient high-side switching configurations.
  • Low On-Resistance (RDS(on)): Minimizes power loss and heat generation during operation.
  • 20V Drain-Source Voltage (VDS): Suitable for low-voltage applications.
  • Surface Mount Package: Facilitates automated assembly and compact design.
  • TrenchFET® Power MOSFET Technology: Provides superior switching performance and efficiency.

Benefits:

  • Improved Efficiency: Low RDS(on) reduces power dissipation, leading to higher efficiency.
  • Compact Design: Surface mount package enables smaller and more integrated designs.
  • Reliable Switching: TrenchFET technology ensures consistent and reliable switching performance.
  • Simplified Circuit Design: P-Channel configuration simplifies high-side switching implementations.
  • Reduced Heat Generation: Lower power losses result in less heat generation, improving system reliability.

Additional Details:

The SI9958DY-T1-E3 features a typical RDS(on) of around 0.045 Ohms at a gate-source voltage (VGS) of -4.5V. It is designed to handle continuous drain currents up to several amperes, depending on the specific operating conditions and thermal management. The device is typically supplied in tape and reel packaging for automated assembly processes. It is RoHS compliant, ensuring it meets environmental regulations regarding hazardous substances. This MOSFET is particularly well-suited for portable devices, power adapters, and other applications where efficiency and compact size are critical. Always consult the datasheet for precise electrical characteristics, thermal performance, and application guidelines.

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