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SI9435DY-T1-E3

Name: SI9435DY-T1-E3
Brand: Vishay
SKU: 323241
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	SI9435DY-T1-E3
Manufacturer	Vishay
Catalog	FETs - Single
Description	Trans MOSFET P-CH 30V 5.1A 8-Pin SOIC N T/R / MOSFET P-CH 30V 5.3A 8-SOIC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay
Series	PowerTrench
Packaging	Reel(TR)
FET Type	MOSFET P-Channel, Metal Oxide
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)
Rds On (Max) @ Id, Vgs	50 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Gate Charge (Qg) @ Vgs	23nC @ 10V
Input Capacitance (Ciss) @ Vds	690pF @ 15V
Power - Max	1W
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	SMD/SMT
Package	8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package	8-SO
Win Source Part Number	190181-SI9435DY-T1-E3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Balance
Family Name	Si9435DY
Introduction Date	April 07, 2000
ECCN	EAR99
Estimated EOL Date	Obsolete / End of life
Ultra Librarian 3D Model	Ultra Librarian SI9435DY-T1-E3 CAD Model

Description

The Vishay PowerTrench MOSFET transistor is a P-channel, metal oxide FET with a logic level gate.

Maximum Drain to Source Voltage: 30V
Continuous Drain Current: 5.3A (Ta) @ 25°C
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250μA
Gate Charge (Qg) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) @ Vds: 690pF @ 15V
Package: 8-SOIC (0.154", 3.90mm Width)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
18+	$3.2640	$58.7520
44+	$2.6784	$117.8496
67+	$2.5953	$173.8851
92+	$2.5110	$231.0120
119+	$2.4278	$288.9082
160+	$2.1760	$348.1600

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,620 pieces

MOQ: 18 pcs

Order Increment : 1 pcs

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