SI9435BDY-E3 Vishay
Same model may have multiple batches, images only for reference.

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Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Vishay
Series TrenchFET
Packaging Reel(TR)
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Rds On (Max) @ Id, Vgs 42 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 24nC @ 10V
Power - Max 1.3W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package 8-SO
Win Source Part Number 190178-SI9435BDY-E3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI9435BDY-E3 CAD Model

Description

The Vishay 190178-SI9435BDY-E3 is a MOSFET P-Channel, Metal Oxide transistor that belongs to the TrenchFET series.

  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id): 4.1A (Ta) @ 25°C
  • Maximum On-Resistance (Rds On): 42 mOhm @ 5.7A, 10V
  • Gate Threshold Voltage (Vgs(th)): 3V @ 250μA
  • Gate Charge (Qg): 24nC @ 10V
  • Power: 1.3W
  • Package: 8-SOIC (0.154", 3.90mm Width)

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