RQ3E080BNTB Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 8A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 15.2mOhm at 8A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 14.5nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 660pF at 15V
Power Dissipation (Maximum) 2W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 8-HSMT (3.2x3)
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 756158-RQ3E080BNTB
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RQ3E080BNTB CAD Model

Description

The RQ3E080BNTB is a N-channel MOSFET manufactured by Rohm Semiconductor.

  • Maximum Power Dissipation: 2W
  • Vds Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A
  • Maximum Rds On: 15.2mOhm @ 8A and 10V
  • Gate source voltage (th): 2.5V @ 1mA
  • Input Capacitance (Ciss): 660pF @ 15V
  • Operating Temperature Range: 150°C
  • Packaging: Reel
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Drive Voltage for Maximum Rds On: 4.5V
  • Drive Voltage for Minimum Rds On: 10V
  • Gate Charge (Qg): 14.5nC @ 10V
  • Gate Source Voltage (Maximum): ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4643 $51.0730
265+ $0.3810 $100.9650
410+ $0.3691 $151.3310
560+ $0.3572 $200.0320
725+ $0.3453 $250.3425
970+ $0.3095 $300.2150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 2,670 pieces
MOQ: 110 pcs
Order Increment : 1 piece
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