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SI7686SDP-T1-E3

Part No SI7686SDP-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 190095-SI7686SDP-T1-E3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7686SDP-T1-E3 CAD Model

Description

The SI7686SDP-T1-E3 is a P-Channel 20 V MOSFET from Vishay. It's designed for load switching and power management applications where efficiency and space are critical. This MOSFET utilizes Vishay's advanced trench technology, resulting in low on-resistance (RDS(on)) and gate charge, which minimizes power losses during switching.

Applications:

  • Load Switching: Ideal for controlling power distribution in portable devices and systems.
  • Power Management: Used in battery management systems (BMS) for efficient charging and discharging control.
  • DC-DC Conversion: Suitable for low-voltage DC-DC converters where high efficiency is required.
  • Notebook Computers: Power management in laptops.
  • Portable Devices: Smart phones, tablets, and other battery-powered electronics.

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses for improved efficiency.
  • Low Gate Charge (Qg): Reduces switching losses, enabling higher switching frequencies.
  • 20V Drain-Source Voltage (VDS): Suitable for low-voltage applications.
  • P-Channel MOSFET: Allows for simple high-side switching configurations.
  • Trench Technology: Provides superior on-resistance and gate charge performance.
  • Halogen-Free According to IEC 61249-2-21 Definition: Environmentally friendly.
  • Lead (Pb)-Free Termination: RoHS compliant.
  • PowerPAK® SC-70 Package: Space-saving surface mount package.

Benefits:

  • Improved Efficiency: Low RDS(on) and Qg reduce power losses, increasing overall system efficiency.
  • Extended Battery Life: Lower power consumption translates to longer battery life in portable devices.
  • Reduced Heat Generation: Lower power losses result in less heat generation, improving system reliability.
  • Space Savings: Compact PowerPAK® SC-70 package saves valuable board space.
  • Simplified Design: P-channel configuration simplifies high-side switching designs.

Additional Details:

The SI7686SDP-T1-E3 is supplied in tape and reel packaging for automated assembly. The MOSFET is designed to operate over a wide temperature range, making it suitable for various environments. Detailed electrical characteristics, including RDS(on) vs. gate voltage curves, can be found in the product datasheet.

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