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SI7434DP-T1-GE3

Part No SI7434DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 250V 2.3A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) at 25°C 2.3A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Maximum) at Id, Vgs 155mOhm at 3.8A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 50nC at 10V
Maximum Vgs ±20V
Power Dissipation (Maximum) 1.9W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SO-8
Manufacturer Package PowerPAK SO-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811128-SI7434DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI7434DP-T1-GE3 CAD Model

Description

The 749506 is a Vishay Siliconix MOSFET semiconductor component that is mounted using SMD and comes in a reel packaging.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 250V
  • Maximum Power Dissipation: 1.9W
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Supplier Device Package: PowerPAK SO-8
  • Temperature Range: -55°C to 150°C
  • Manufacturer Pack Quantity: 3,000
  • MSL Level: 1 (Unlimited)
  • Rds On (Maximum) @ Id, Vgs: 155mOhm @ 3.8A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Vgs(th) (Maximum) @ Id: 4V @ 250μA
  • Maximum Vgs: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8209 $52.3881
21+ $4.7762 $100.3002
33+ $4.6269 $152.6877
45+ $4.4777 $201.4965
58+ $4.3284 $251.0472
78+ $3.8806 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,059 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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