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Same model may have multiple batches, images only for reference.
SI7222DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7222DN-T1-GE3

Part No SI7222DN-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 40V 6A PPAK 1212-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 42mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 20V
Power - Max 17.8W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
Base Product Number SI7222
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 666736-SI7222DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI7222DN-T1-GE3 CAD Model

Description

The SI7222DN-T1-GE3 is a dual N-channel MOSFET array from Vishay's TrenchFET series.

  • Application: Designed for use in discrete semiconductor products.
  • Vdss: 40V.
  • Id: 6A @ 25°C.
  • Rds On: 42mOhm @ 5.7A and 10V gate-source voltage (Vgs).
  • Vgs(th): 1.6V @ 250μA.
  • Mounting: Surface mountable.
  • Package: PowerPAK 1212-8 Dual package.
  • Power Dissipation: 17.8W.
  • Operating Temperature: -55°C to 150°C.
  • Status: Part of Vishay's obsolete product lineup.

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