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SI5432DC-T1-GE3-S

Part No SI5432DC-T1-GE3-S
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 190039-SI5432DC-T1-GE3-S
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5432DC-T1-GE3-S CAD Model

Description

The SI5432DC-T1-GE3-S is a P-Channel MOSFET from Vishay Siliconix, designed for efficient power management and load switching in portable and space-constrained applications.

Applications:

  • Load Switching: Controls power delivery to various loads in portable devices such as smartphones, tablets, and wearables.
  • Power Management: Used in DC-DC converters and power regulation circuits for efficient voltage conversion.
  • Battery Management Systems (BMS): Plays a role in battery charging and discharging circuits, ensuring optimal battery performance and safety.
  • Portable Devices: Found in numerous portable electronics requiring efficient and compact power management solutions.

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss and enhances efficiency, leading to longer battery life.
  • Low Gate Threshold Voltage (VGS(th)): Enables easy driving from low-voltage logic circuits.
  • Small Footprint: Housed in a PowerPAK SC-70 package, saving valuable board space.
  • TrenchFET® Power MOSFET Technology: Provides superior switching performance and power density.
  • RoHS Compliant: Meets environmental regulations for hazardous substance content.

Benefits:

  • Increased Efficiency: Low RDS(on) minimizes power dissipation, extending battery life in portable devices.
  • Simplified Gate Drive: Low VGS(th) allows direct interfacing with low-voltage logic, simplifying circuit design.
  • Reduced Board Space: Compact package enables high-density circuit board layouts.
  • Improved Thermal Performance: Efficient heat dissipation due to low RDS(on).
  • Environmentally Friendly: RoHS compliance ensures responsible usage and disposal.

Additional Details:

The SI5432DC-T1-GE3-S is shipped in tape and reel packaging (T1) for automated assembly. The 'GE3' suffix indicates RoHS compliance, and 'S' may refer to a specific packing option. Key electrical characteristics include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and pulsed drain current (IDM). The RDS(on) is a critical parameter dependent on VGS and temperature, affecting power dissipation. Consult the Vishay datasheet for the SI5432DC-T1-GE3-S for detailed specifications and application guidelines.

Proper PCB layout is crucial for effective heat dissipation. Careful attention should be paid to the absolute maximum ratings to ensure reliable operation and prevent device failure.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,195+ $0.2426 $289.9070
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100,000 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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