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Same model may have multiple batches, images only for reference.
SI5406DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5406DC-T1-GE3

Part No SI5406DC-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 12V 6.9A 1206-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) at 25°C 6.9A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Maximum) at Id, Vgs 20mOhm at 6.9A, 4.5V
Vgs(th) (Maximum) at Id 600mV at 1.2mA (Min)
Gate Charge (Qg) (Maximum) at Vgs 20nC at 4.5V
Maximum Vgs ±8V
Power Dissipation (Maximum) 1.3W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 1206-8 ChipFET
Manufacturer Package 8-SMD, Flat Lead
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803692-SI5406DC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5406DC-T1-GE3 CAD Model

Description

The Vishay Siliconix SI5406DC-T1-GE3 is an N-channel MOSFET transistor that is designed for surface mount technology (SMT).

  • Drain to Source Voltage: 12V
  • Continuous Drain Current: 6.9A
  • Maximum On-Resistance (Rds On): 20mOhm @ 6.9A and 4.5V
  • Maximum Gate-Source Voltage (Vgs): ±8V
  • Gate Charge (Qg): 20nC @ 4.5V
  • Package: 8-SMD, Flat Lead
  • Maximum Power Dissipation: 1.3W

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