The SI4382DY-T1-E3 from Vishay is a P-Channel 30 V (D-S) MOSFET. This MOSFET is engineered for applications demanding efficient power control and switching. Its design emphasizes low on-resistance and fast switching, enabling optimal performance and reduced power consumption.

Applications

• Load Switching
• Power Management in Portable Devices
• DC-DC Converters
• Battery Management Systems
• Motor Control

Features

• P-Channel MOSFET
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• 30V Drain-Source Voltage (VDS)
• TrenchFET® Power MOSFET Technology
• Halogen-free According to IEC 61249-2-21 Definition

Benefits

• Improved Energy Efficiency: The low on-resistance minimizes power loss, improving energy efficiency in power conversion and switching applications.
• Reduced Heat Dissipation: Lower RDS(on) results in less heat generation, improving thermal performance and system reliability.
• Faster Switching: Enables quicker response times in switching circuits, enhancing performance in dynamic applications.
• Compact Design: The small footprint allows for use in space-constrained applications.
• Environmentally Friendly: Halogen-free construction aligns with environmentally conscious designs.

Additional Details

The SI4382DY-T1-E3 incorporates Vishay's TrenchFET® power MOSFET technology for optimized performance. It comes in a surface-mount package to streamline automated assembly. Designed to function across a broad temperature spectrum, it is appropriate for many environments. It comes in a PowerPAK® SO-8 package.