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Same model may have multiple batches, images only for reference.
SI3911DV-T3-E3 Vishay
Same model may have multiple batches, images only for reference.

SI3911DV-T3-E3

Part No SI3911DV-T3-E3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2P-CH 20V 1.8A 6TSOP
Datasheet
SI3911DV-T3-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Manufacturer Vishay
Series TrenchFET
Packaging Reel
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.8A
Rds On (Max) @ Id, Vgs 145 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Gate Charge (Qg) @ Vgs 7.5nC @ 4.5V
Power - Max 830mW
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package SOT-23-6 Thin, TSOT-23-6
Manufacturer Device Package 6-TSOP
Win Source Part Number 189821-SI3911DV-T3-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3911DV-T3-E3 CAD Model

Description

The SI3911DV-T3-E3 is a dual P-channel MOSFET transistor designed by Vishay.

  • Part of: TrenchFET series
  • FET Type: Logic Level Gate FET
  • Available Packages: SOT-23-6 Thin and TSOT-23-6
  • Maximum Drain-Source Voltage: 20V
  • Continuous Drain Current: 1.8A
  • Rds On: 145mOhm @ 2.2A and 4.5V
  • Gate Charge: 7.5nC @ 4.5V
  • Suitable Applications: load switching, power management, and battery protection circuits

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