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Same model may have multiple batches, images only for reference.
SI3129DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3129DV-T1-GE3

Part No SI3129DV-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description P-CHANNEL 80 V (D-S) MOSFET TSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number 30000608-SI3129DV-T1-GE3
Manufacturer Vishay Siliconix
Category Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series TrenchFET®
Package Tape & Reel (TR) /Cut Tape (CT)
FET Type P-Channel
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs 82.7mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Input Capacitance (Ciss) @ Vds 805 pF @ 40 V
Ultra Librarian 3D Model Ultra Librarian SI3129DV-T1-GE3 CAD Model

Description

The Vishay Siliconix TrenchFET is a high-performance P-channel MOSFET designed for use in a range of electronic devices.

  • Channel Type: P-Channel MOSFET
  • Drain to Source Voltage: 80V
  • Current-Continuous Drain (Id): 3.8A (Ta), 5.4A (Tc)
  • Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • Operating Temperature: -55°C to 150°C
  • Packaging: Tape & Reel (TR) /Cut Tape (CT)

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