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SI2314DS-T1-E3

Part No SI2314DS-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 189607-SI2314DS-T1-E3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2314DS-T1-E3 CAD Model

Description

The SI2314DS-T1-E3 is an N-channel MOSFET from Vishay Siliconix. It is engineered for efficient power switching and load management in a variety of low-voltage applications. It is similar to the SI2314DS, but with specific packaging for automated assembly.

Applications:

  • Load Switching: Ideal for switching power to various circuits in portable devices, computers, and other electronic systems.
  • Power Management: Utilized in power management circuits for efficient voltage regulation.
  • DC-DC Conversion: Suitable for use in DC-DC converters where an N-channel MOSFET is required.
  • Battery Management: Employed in battery charging and discharging circuits.

Features:

  • Low On-Resistance: Minimizes power loss and improves efficiency.
  • TrenchFET® Power MOSFET: Provides high power density and efficient switching performance.
  • Logic Level Gate Drive: Operates efficiently with low gate drive voltage.
  • Small Footprint: Available in a small surface-mount package for space-saving applications.
  • Tape and Reel Packaging: Supplied in tape and reel for automated assembly processes.
  • Lead (Pb)-free and Halogen-free: Environmentally friendly and compliant with RoHS standards.

Benefits:

  • Enhanced Efficiency: Low on-resistance contributes to minimal power dissipation, maximizing overall system efficiency.
  • Compact Design: Small package size allows for integration into densely populated circuit boards.
  • Reliable Performance: Designed for robust and consistent operation across a wide range of conditions.
  • Simplified Circuit Design: Logic level gate drive simplifies gate drive requirements, making it suitable for microcontroller-based systems.
  • Automated Assembly: Tape and reel packaging simplifies and accelerates the assembly process.

Additional Details:

The SI2314DS-T1-E3 has a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of 3.4A. Its on-resistance (RDS(on)) is typically 65 mΩ at VGS = 4.5V and 110 mΩ at VGS = 2.5V. The device is supplied in a SOT-23 package. The T1 suffix indicates that the device is packaged on tape and reel for automated assembly. The low gate threshold voltage makes it suitable for battery-powered applications and direct logic-level interfacing.

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Shipping Information

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