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SI2306DS-T1-E3

Part No SI2306DS-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 189594-SI2306DS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI2306DS-T1-E3 CAD Model

Description

The SI2306DS-T1-E3 is an N-Channel MOSFET manufactured by Vishay. It's designed for low-voltage, high-speed switching applications where efficiency is a key requirement.

Applications

  • DC-DC Converters
  • Load Switches
  • Power Management in Portable Devices
  • Battery Charging Circuits
  • LED Drivers

Features

  • Low On-Resistance (RDS(on)): Minimizes power loss and heat generation.
  • Fast Switching Speed: Enables high-frequency operation.
  • Logic Level Gate Drive: Compatible with low-voltage logic circuits.
  • TrenchFET® Power MOSFET: Vishay's advanced trench technology for enhanced performance.
  • Halogen-Free: Environmentally friendly and compliant with RoHS standards.

Benefits

  • Improved Efficiency: Reduced RDS(on) maximizes power conversion efficiency.
  • Extended Battery Life: Lower power consumption extends battery life in portable applications.
  • Simplified Circuit Design: Logic level gate drive simplifies interfacing with microcontrollers.
  • Reduced Heat Dissipation: Lower RDS(on) minimizes heat generation, reducing the need for heat sinks.
  • Environmentally Compliant: Halogen-free construction promotes sustainability.

Additional Details

The SI2306DS-T1-E3 typically comes in a SOT-23 package. The drain-source voltage (VDS) is generally rated around 30V, and the continuous drain current (ID) is typically in the range of 4A to 6A, depending on the operating conditions and the effectiveness of thermal management. The gate threshold voltage (VGS(th)) is usually between 1V and 3V. The 'E3' suffix indicates that the device is RoHS compliant and lead-free. The 'T1' usually indicates tape and reel packaging. This MOSFET is optimized for applications where low on-resistance and fast switching are critical. The trenchFET technology contributes to a lower RDS(on) compared to planar MOSFETs, leading to less heat generation and improved overall performance. Proper thermal management is crucial to ensure the device operates within its safe operating area. Always consult the Vishay datasheet for precise electrical characteristics and thermal performance data at different operating conditions. Suitable for designs requiring high efficiency and compact size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1675 $57.7875
845+ $0.1374 $116.1030
1,305+ $0.1328 $173.3040
1,805+ $0.1282 $231.4010
2,315+ $0.1247 $288.6805
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 291,600 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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