The SI1917EDH-T1-GE3 is a P-Channel 20V MOSFET from Vishay, designed for efficient load switching and power management. It offers a low on-resistance to minimize power losses and is RoHS compliant. This makes it ideal for environmentally sensitive applications.

Applications

• Load Switching
• Power Management in Portable Devices
• Battery Management Systems
• DC-DC Conversion

Features

• P-Channel MOSFET
• Low On-Resistance (RDS(on))
• 20V Drain-Source Voltage
• TrenchFET® Power MOSFET Technology
• RoHS Compliant

Benefits

• Improved power efficiency due to low on-resistance
• Reduced power losses in switching applications
• Environmentally friendly due to RoHS compliance
• Enhanced thermal performance
• Suitable for lead-free assembly processes

Additional Details

Like other Vishay MOSFETs, the SI1917EDH-T1-GE3 utilizes TrenchFET® technology. This ensures a low on-resistance and fast switching speeds, contributing to higher efficiency. The RoHS compliance guarantees that the device meets environmental standards.

Technical Specifications:

• Polarity: P-Channel
• Drain-Source Voltage (VDS): 20 V
• Gate-Source Voltage (VGS): ±12 V
• Continuous Drain Current (ID): -5.7 A
• On-Resistance (RDS(on) at VGS = -4.5V): 0.033 Ω
• Operating Temperature Range: -55 °C to +150 °C
• Package: TSOP-6