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Same model may have multiple batches, images only for reference.
IRLZ24S Real Image
Same model may have multiple batches, images only for reference.

IRLZ24S

Part No IRLZ24S
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET POWER MOSFET | MOSFET N-CH 60V 17A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 17A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 100mOhm at 10A, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 18nC at 5V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 870pF at 25V
Power Dissipation (Maximum) 3.7W, 60W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188691-IRLZ24S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLZ24S CAD Model

Description

The IRLZ24S is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Vishay Siliconix
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 60V (Maximum)
  • Continuous Drain Current: 17A
  • On-Resistance: 100mOhm @ 10A and 5V gate-source voltage (Maximum)
  • Operating Temperature: -55°C to 175°C
  • RoHS Compliant: Yes
  • Input Capacitance: 870pF @ 25V
  • Gate Charge: 18nC @ 5V

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220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
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