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Same model may have multiple batches, images only for reference.
IRFU9024 Real Image
Same model may have multiple batches, images only for reference.

IRFU9024

Part No IRFU9024
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A) | MOSFET P-CH 60V 8.8A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 8.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 280mOhm at 5.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 570pF at 25V
Power Dissipation (Maximum) 2.5W, 42W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-251AA
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188121-IRFU9024
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFU9024 CAD Model

Description

The Vishay Siliconix MOSFET is a high-quality electronic component that is designed to provide reliable performance.

  • Vds - Drain-Source Breakdown Voltage: 60V
  • Id - Continuous Drain Current: 8.8A
  • Rds On (Maximum) @ Id, Vgs: 280mOhm @ 5.3A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 19nC @ 10V
  • Gate Source Voltage (th) (Maximum) @ Id: 4V @ 250μA
  • Gate Source Voltage (Maximum): ±20V
  • Input capacitance (Ciss) (Maximum) @ Vds: 570pF @ 25V
  • Package: TO-251AA
  • Mounting Style: Through Hole
  • Win Source Part Number: 1188121-IRFU9024
  • Supply and demand status: Limited

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