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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 100mOhm at 8.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 640pF at 25V
Power Dissipation (Maximum) 2.5W, 42W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187851-IRFR024TRL
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR024TRL CAD Model

Description

The Vishay Siliconix 547990 is a N-Channel MOSFET semiconductor device, which is a part of the Discrete Semiconductor Products category.

  • Status: It is obsolete
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 14A
  • Maximum Power Dissipation: 2.5W
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 640pF @ 25V
  • Gate Charge (Qg): 25nC @ 10V
  • Gate-Source Voltage Threshold (Vgs): 4V @ 250μA
  • Maximum Rds On: 100mOhm @ 8.4A and 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63 package with a manufacturer pack quantity of 3,000.
  • It is suitable for use in power management applications.

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