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Same model may have multiple batches, images only for reference.
IRFPC50A Real Image
Same model may have multiple batches, images only for reference.

IRFPC50A

Part No IRFPC50A
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A) | MOSFET N-CH 600V 11A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 580mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 70nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2100pF at 25V
Power Dissipation (Maximum) 180W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187816-IRFPC50A
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFPC50A CAD Model

Description

The Vishay Siliconix IRFPC50A is a high-voltage N-channel MOSFET designed for use in various electronic devices.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A
  • On-Resistance: 580mΩ @ 10V gate-source voltage and 6A drain current
  • Package: TO-247-3
  • Operating Temperature: -55°C to 150°C
  • Applications: Power supplies, motor control, and other high-voltage switching circuits

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